Nature research paper: Ballistic two-dimensional InSe transistors
The International Roadmap for Devices and Systems forecasts that, for silicon-based metal–oxide–semiconductor field-effect transistors , the scaling of the gate length will stop at 12 nm and the ultimate supply voltage will not decrease to less than 0.6 V . This defines the final integration density and power consumption at the end of the scaling process for silicon-based chips.
Here we report a FET with 2D indium selenide with high thermal velocity as channel material that operates at 0.5 V and achieves record high transconductance of 6 mS μmand a room-temperature ballistic ratio in the saturation region of 83%, surpassing those of any reported silicon FETs. An yttrium-doping-induced phase-transition method is developed for making ohmic contacts with InSe and the InSe FET is scaled down to 10 nm in channel length.
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